Semiconductor fin on local oxide

ABSTRACT

A semiconductor substrate including a first epitaxial semiconductor layer is provided. The first epitaxial semiconductor layer includes a first semiconductor material, and can be formed on an underlying epitaxial substrate layer, or can be the entirety of the semiconductor substrate. A second epitaxial semiconductor layer including a second semiconductor material is epitaxially formed upon the first epitaxial semiconductor layer. Semiconductor fins including portions of the second single crystalline semiconductor material are formed by patterning the second epitaxial semiconductor layer employing the first epitaxial semiconductor layer as an etch stop layer. At least an upper portion of the first epitaxial semiconductor layer is oxidized to provide a localized oxide layer that electrically isolates the semiconductor fins. The first semiconductor material can be selected from materials more easily oxidized relative to the second semiconductor material to provide a uniform height for the semiconductor fins after formation of the localized oxide layer.

BACKGROUND

The present disclosure relates to a semiconductor structure, and moreparticularly to a semiconductor structure including a semiconductor finon a localized oxide, and a method of manufacturing the same.

While bulk semiconductor substrates are less costly than SOI substrates,bulk semiconductor substrates pose difficulties in device isolationbecause planar field effect transistors are junction isolated. Asdevices are scaled down, junction doping must increase to maintain thesame level of junction isolation, but this tends to increase junctionleakage.

Fin field effect transistors (finFETs) provide enhanced short channelperformance over planar field effect transistors. However, typicalfinFETs require a semiconductor-on-insulator (SOI) substrate in order toprovide electrically isolated semiconductor fins. Use of an SOIsubstrate significantly increases the cost of manufacturing, andtherefore, a method of forming finFETs without employing an SOIsubstrate is desired.

SUMMARY

A semiconductor substrate including a first epitaxial semiconductorlayer is provided. The first epitaxial semiconductor layer includes afirst semiconductor material, and can be formed on an underlyingepitaxial substrate layer, or can be the entirety of the semiconductorsubstrate. A second epitaxial semiconductor layer including a secondsemiconductor material is epitaxially formed upon the first epitaxialsemiconductor layer. Semiconductor fins including portions of the secondsingle crystalline semiconductor material are formed by patterning thesecond epitaxial semiconductor layer employing the first epitaxialsemiconductor layer as an etch stop layer. At least an upper portion ofthe first epitaxial semiconductor layer is oxidized to provide alocalized oxide layer that electrically isolates the semiconductor fins.The first semiconductor material can be selected from materials that aremore easily oxidized relative to the second semiconductor material toprovide a uniform height for the semiconductor fins after formation ofthe localized oxide layer.

According to an aspect of the present disclosure, a semiconductorstructure includes a single crystalline semiconductor material portionin a substrate, and a semiconductor oxide portion located on the singlecrystalline semiconductor material portion. The semiconductor oxideportion comprises a first semiconductor oxide portion including an oxideof a first semiconductor material and a second semiconductor oxideportion contacting a top surface of the first semiconductor oxideportion and including an oxide of a second semiconductor material thatis different from the first semiconductor material. The semiconductorstructure further includes a semiconductor fin that includes a portionof the second semiconductor material.

According to another aspect of the present disclosure, a method offorming a semiconductor structure is provided. A semiconductor substrateincluding a first epitaxial semiconductor layer that includes a firstsingle crystalline semiconductor material is provided. A secondepitaxial semiconductor layer including a second single crystallinesemiconductor material in epitaxial alignment with, and having adifferent composition from, the first single crystalline semiconductormaterial on the first epitaxial semiconductor layer is formed. Apatterned etch mask layer is formed over the second epitaxialsemiconductor layer. An anisotropic etch is performed through the secondepitaxial semiconductor layer employing the patterned etch mask layer asan etch mask and employing the first epitaxial semiconductor layer as anetch stop layer. A semiconductor fin including a remaining portion ofthe second epitaxial semiconductor material layer is formed by theanisotropic etch. An oxygen-impermeable spacer is formed on sidewalls ofthe semiconductor fin. A semiconductor oxide portion is formed byoxidizing at least portions of the first epitaxial semiconductor layer.A remaining portion of the semiconductor fin is vertically spaced froman unoxidized semiconductor material portion of the semiconductorsubstrate by the semiconductor oxide portion.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a vertical cross-sectional view of a first exemplarysemiconductor structure after formation of a first epitaxialsemiconductor layer and a second epitaxial semiconductor layer accordingto an embodiment of the present disclosure.

FIG. 2 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of an optional dielectric layer,an oxygen-impermeable layer, and a patterned etch mask layer accordingto an embodiment of the present disclosure.

FIG. 3A is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of vertical stacks of asemiconductor fin, an optional dielectric cap, and an oxygen-impermeablecap according to an embodiment of the present disclosure.

FIG. 3B is a top-down view of the first exemplary semiconductorstructure of FIG. 3A.

FIG. 4 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of oxygen-impermeable spacersaccording to an embodiment of the present disclosure.

FIG. 5 is a vertical cross-sectional view of the first exemplarysemiconductor structure after recessing physically exposed portions ofthe first epitaxial semiconductor layer according to an embodiment ofthe present disclosure.

FIG. 6 is a vertical cross-sectional view of the first exemplarysemiconductor structure during oxidation of portions of the firstepitaxial semiconductor layer according to an embodiment of the presentdisclosure.

FIG. 7 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of semiconductor oxide portionsby conversion of various portions of the first epitaxial semiconductorlayer, bottom portions of the semiconductor fins, and optionally topportion of a substrate semiconductor layer according to an embodiment ofthe present disclosure.

FIG. 8 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a semiconductor oxide portionby conversion of the entirety of the first epitaxial semiconductorlayer, bottom portions of the semiconductor fins, and a top portion of asubstrate semiconductor layer according to the embodiment of the presentdisclosure.

FIG. 9 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of the oxygen-impermeable caps andthe oxygen-impermeable spacers according to an embodiment of the presentdisclosure.

FIG. 10A is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a gate dielectric and a gateelectrode according to an embodiment of the present disclosure.

FIG. 10B is a top-down view of the first exemplary semiconductorstructure of FIG. 10A.

FIG. 11 is a vertical cross-sectional view of a variation of the firstexemplary semiconductor structure according to an embodiment of thepresent disclosure.

FIG. 12 is a vertical cross-sectional view of a second exemplarysemiconductor structure after formation of a second epitaxialsemiconductor layer on a first epitaxial semiconductor layer accordingto an embodiment of the present disclosure.

FIG. 13 is a vertical cross-sectional view of the second exemplarysemiconductor structure after formation of a gate dielectric and a gateelectrode according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

As stated above, the present disclosure relates to a semiconductorstructure including a semiconductor fin on a localized oxide, and amethod of manufacturing the same. Aspects of the present disclosure arenow described in detail with accompanying figures. It is noted that likereference numerals refer to like elements across different embodiments.The drawings are not necessarily drawn to scale.

As used herein, ordinals such as “first,” “second,” and “third” areemployed for the purpose distinguishing similar elements, and differentordinals may be employed for a same element across the specification andthe claims.

Referring to FIG. 1, a first exemplary semiconductor structure includesa single crystalline semiconductor substrate 10 that includes a singlecrystalline semiconductor material. The single crystalline semiconductorsubstrate 10 can include silicon, germanium, a silicon-germanium alloy,a III-V compound semiconductor material, a II-VI compound semiconductormaterial, or any other semiconductor material that can be provided as asingle crystalline semiconductor material.

A first epitaxial semiconductor layer 20 including a first singlecrystalline semiconductor material is formed on the top surface of thesingle crystalline semiconductor substrate 10. The first epitaxialsemiconductor layer 20 is formed in epitaxial alignment with the singlecrystalline semiconductor material of the single crystallinesemiconductor substrate 10. As used herein, “epitaxial alignment” refersto alignment of atoms in a same single crystalline structure. The firstepitaxial semiconductor layer 20 can be formed by deposition of thefirst single crystalline semiconductor material by epitaxy. Alternatelyor additionally, the first epitaxial semiconductor layer 20 can beformed by implantation of an additional semiconductor material into anupper portion of the single crystalline semiconductor substrate 10 sothat the implanted portion of the single crystalline semiconductorsubstrate 10 is converted into the first epitaxial semiconductor layer20. The thickness of the first epitaxial semiconductor layer 20 can befrom 20 nm to 200 nm, although lesser and greater thicknesses can alsobe employed.

In one embodiment, the first epitaxial semiconductor layer 20 caninclude the same semiconductor material as the single crystallinesemiconductor substrate 10. In another embodiment, the first epitaxialsemiconductor layer 20 can include a semiconductor material that isdifferent from the semiconductor material of the single crystallinesemiconductor substrate 10.

As used herein, a first semiconductor material and a secondsemiconductor material are “different” from each other if thecomposition of the first semiconductor material excluding electricaldopants is different from the composition of the second semiconductormaterial excluding electrical dopants. As used herein, “electricaldopants” refer to any atoms that generate extra holes or extra electronsabove a level provided by an intrinsic semiconductor material. Thus,atoms that introduce any additional conductivity above the conductivityprovided by an intrinsic semiconductor material are electrical dopants.For example, if a semiconductor material is an elemental semiconductormaterial or an alloy of at least two elemental semiconductor materials,all Group II elements, Group III elements, Group V elements, and GroupVI elements are electrical dopants. If a semiconductor material is acompound semiconductor material, any atom that generates extra electronsor holes are electrical dopants.

For example, a first silicon-germanium alloy having an atomicconcentration of silicon at a first percentage is considered to be adifferent semiconductor material from a second silicon-germanium alloyhaving an atomic concentration of silicon at a second percentage if thefirst percentage and the second percentage are different. However, twosilicon-germanium alloys having the same atomic concentration of siliconrelative to germanium but having different electrical dopants areconsidered to be the same semiconductor material because all electricaldopants are excluded from consideration in determining whether twosemiconductor material are the same or different.

A second epitaxial semiconductor layer 30 including a second singlecrystalline semiconductor material is formed on the top surface of thefirst epitaxial semiconductor layer 20. The second epitaxialsemiconductor layer 30 is formed in epitaxial alignment with the singlecrystalline semiconductor material of the first epitaxial semiconductorlayer 20. The second epitaxial semiconductor layer 30 can be formed bydeposition of the second single crystalline semiconductor material byepitaxy. Alternately or additionally, the second epitaxial semiconductorlayer 30 can be formed by implantation of an additional semiconductormaterial into an upper portion of the first epitaxial semiconductorlayer 20 so that the implanted portion of the first epitaxialsemiconductor layer 20 is converted into the second epitaxialsemiconductor layer 30. The thickness of the second epitaxialsemiconductor layer 30 can be from 20 nm to 500 nm, although lesser andgreater thicknesses can also be employed.

In one embodiment, the second epitaxial semiconductor layer 30 caninclude the same semiconductor material as the first epitaxialsemiconductor layer 20. In another embodiment, the second epitaxialsemiconductor layer 30 can include a semiconductor material that isdifferent from the semiconductor material of the first epitaxialsemiconductor layer 20.

In one embodiment, the second single crystalline semiconductor materialin the second epitaxial semiconductor layer 30 is in epitaxial alignmentwith, and has a different composition from, the first single crystallinesemiconductor material of the first epitaxial semiconductor layer 20. Inone embodiment, the first single crystalline semiconductor material andthe second single crystalline semiconductor material can be selected sothat the first single crystalline semiconductor material has a greateroxidation rate than the second single crystalline semiconductormaterial.

For example, the first single crystalline semiconductor material caninclude a silicon germanium alloy, and the second single crystallinesemiconductor material can include silicon. In another example, thefirst single crystalline semiconductor material can include germanium ora silicon germanium alloy, and the second single crystallinesemiconductor material can include another silicon germanium alloyhaving a greater atomic concentration of silicon than the first singlecrystalline semiconductor material.

The single crystalline semiconductor material of the single crystallinesemiconductor substrate 10 can be the same as, or can be different from,the second single crystalline semiconductor material in the secondepitaxial semiconductor layer. The single crystalline semiconductormaterial of the single crystalline semiconductor substrate 10 is hereinreferred to as a third single crystalline semiconductor material. In oneembodiment, the third single crystalline semiconductor material can bedifferent from the first single crystalline semiconductor material.

Referring to FIG. 2, an optional dielectric layer 40L and anoxygen-impermeable layer 50L can be formed on the second epitaxialsemiconductor layer 30. The optional dielectric layer 40L includes adielectric material such as silicon oxide or a metal nitride. Theoxygen-impermeable layer includes an oxygen-impermeable material such assilicon nitride. As used herein, an “oxygen-impermeable” material refersto a material through which oxygen does not diffuse at temperatures lessthan 1,000° C. during a 30 day period in a sufficient quantity to enableformation of a monolayer of an oxide material behind the material whenprovided at a thickness greater than 4 nm. The oxygen-impermeablematerial includes silicon nitride and metallic nitrides such as TiN,TaN, and WN.

The optional dielectric layer 40L can be formed, for example, byoxidation of a surface portion of the second epitaxial semiconductorlayer 30, or by deposition of a dielectric material by chemical vapordeposition or other deposition methods. The thickness of the optionaldielectric layer 40L, if present, can be from 1 nm to 50 nm, althoughlesser and greater thicknesses can also be employed.

The oxygen-impermeable layer 50L can be formed, for example, by chemicalvapor deposition (CVD) or physical vapor deposition (PVD). In oneembodiment, a silicon nitride layer can be deposited as theoxygen-impermeable layer 50L by chemical vapor deposition. The thicknessof the oxygen-impermeable layer 50L can be from 5 nm to 100 nm, althoughlesser and greater thicknesses can also be employed.

A patterned etch mask layer 57 is formed over the oxygen-impermeablelayer 50L. In one embodiment, the patterned etch mask layer 57 can be apatterned photoresist layer, which can be formed by applying andlithographically patterning a photoresist material over theoxygen-impermeable layer 50L.

The pattern in the patterned etch mask layer 57 can be selected suchthat the area of the patterned etch mask layer 57 is the same as thearea of semiconductor fins to be subsequently formed. In one embodiment,each discrete portion of the patterned etch mask layer 57 can have arectangular cross-sectional shape.

Referring to FIGS. 3A and 3B, the oxygen-impermeable layer 50L and theoptional dielectric layer 40L are patterned by a first anisotropic etchemploying the patterned etch mask layer 57 as an etch mask. Thepatterned portions of the oxygen-impermeable layer 50L are hereinreferred to as oxygen-impermeable caps 50, and the patterned portions ofthe optional dielectric layer 40L are herein referred to as optionaldielectric caps 40.

The pattern in the patterned etch mask layer 57 is transferred throughthe second epitaxial semiconductor layer 30 by a second anisotropicetch. The first epitaxial semiconductor layer 20 can be employed as anetch stop layer for the second anisotropic etch.

In one embodiment, the patterned etch mask layer 57 may be employed asan etch mask at least during an initial portion of the secondanisotropic etch. The patterned etch mask layer 57 may be employed asthe etch mask throughout the second anisotropic etch, or may be consumedduring the second anisotropic etch and the oxygen-impermeable caps 50may be employed as the etch mask during a latter portion of the secondanisotropic etch. Any portion of the patterned etch mask layer 57 thatis not consumed during the second anisotropic etch can be removed afterthe second anisotropic etch, for example, by ashing.

In another embodiment, the patterned etch mask layer 57 can be removedprior to the second anisotropic etch, for example, by ashing. Theoxygen-impermeable caps 50 can be employed as an etch mask throughoutthe entirety of the second anisotropic etch.

Vertical stacks of a semiconductor fin 30, an optional dielectric cap40, and an oxygen-impermeable cap 50 are formed over the first epitaxialsemiconductor layer 20. In one embodiment, the physically exposedportions of the top surface of the first epitaxial semiconductor layer20 may be vertically recessed relative to the interface between the topsurface of the first epitaxial semiconductor layer 20 and thesemiconductor fins 30 because a finite time passes between the detectionof the end point of the second anisotropic etch (through detection ofthe physically exposed surfaces of the first epitaxial semiconductorlayer 20) and termination of the second anisotropic etch. Thesemiconductor fins 30 include the second single crystallinesemiconductor material, and are in epitaxial alignment with the firstepitaxial semiconductor layer 20.

In one embodiment, the width of each vertical stack (30, 40, 50) asmeasured between a pair of parallel sidewalls can be from 4 nm to 50 nm,although lesser and greater widths can also be employed. In oneembodiment, the spacing between vertical stacks (30, 40, 50) can be from10 nm to 100 nm, although lesser and greater spacings can also beemployed.

Referring to FIG. 4, oxygen-impermeable spacers 60 are formed onsidewalls of each vertical stack of a semiconductor fin 30, an optionaldielectric cap 40, and an oxygen-impermeable cap 50. Theoxygen-impermeable spacers 60 include an oxygen-impermeable materialsuch as silicon oxide or a metallic nitride (such as TiN, TaN, WN). Inone embodiment, the oxygen-impermeable spacers 60 can include siliconnitride.

The oxygen-impermeable spacers 60 can be formed, for example, bydeposition of a material layer and removal of horizontal portions of thematerial layer by an anisotropic etch. In one embodiment, theoxygen-impermeable spacers 60 can be formed by a conformal deposition ofa silicon nitride layer by chemical vapor deposition (CVD) and by ananisotropic etch that removes the horizontal portions of the conformallydeposited silicon nitride layer. The lateral thickness of eachoxygen-impermeable spacer 60 (i.e., the lateral distance between aninner sidewall of an oxygen-impermeable spacer 60 and the most proximateouter sidewall of the oxygen-impermeable spacer 60) can be from 3 nm to60 nm, although lesser and greater thicknesses can also be employed.

Referring to FIG. 5, the physically exposed portions of the firstepitaxial semiconductor layer 20 can be optionally recessed by anotheranisotropic etch relative to the bottom surfaces of theoxygen-impermeable spacers 60. The depth of recess does not exceed thethickness of the first epitaxial semiconductor layer 20 (as measuredbetween the planar bottom surface of the first epitaxial semiconductorlayer 20 and the interface with the semiconductor fins 30). In oneembodiment, physically exposed surface portions of the first epitaxialsemiconductor layer 20 may be structurally damaged by implantation ofions (such as germanium ions and/or ions of inert elements) so as toenhance the etch rate during the anisotropic etch that recessesphysically exposed surfaces of the first epitaxial semiconductor layer20.

Optionally, an isotropic etch may be performed to isotropically removethe material of the first epitaxial semiconductor layer 20 fromunderneath the oxygen-impermeable spacers 60. For example, a wet etchemploying ammonia can be employed to laterally and vertically expandrecessed regions in the first epitaxial semiconductor layer 20. Theisotropic etch can reduce the level of oxidation-induced stress onremaining portions of the semiconductor fins 30 after an oxidationprocess to be subsequently performed.

Referring to FIG. 6, portions of the first epitaxial semiconductor layer20 are oxidized to form semiconductor oxide portions 70. The oxidationof the first epitaxial semiconductor layer 20 proceeds downward andoutward from each surface portion of the first epitaxial semiconductorlayer 20 that is physically exposed between the oxygen-impermeablespacers 60. As the oxidation of the first epitaxial semiconductor layer20 proceeds, the first single crystalline semiconductor material isoxidized from underneath the oxygen-impermeable spacers 60 and then fromunderneath the semiconductor fins 30. During the oxidation, theoxygen-impermeable caps 50 and the oxygen-impermeable spacers 60 preventdiffusion of oxygen therethrough, and thereby prevent oxidation of thesemiconductor fins 30 from the top surfaces or sidewall surfacesthereof.

Any thermal oxidation process known in the art may be employed tooxidize portions of the first epitaxial semiconductor layer 20. Forexample, wet oxidation or dry oxidation can be employed to oxidizeportions of the first epitaxial semiconductor layer 20 and bottomportions of the semiconductor fins 30. Top portions of the singlecrystalline semiconductor substrate 10 may, or may not be oxidized.

Referring to FIG. 7, the temperature, the gas composition, the partialpressure of oxidizing agent(s), and the duration of the anneal can beselected such that the semiconductor oxide portions 70 are formed tounderlie peripheral portions of each semiconductor fin 30. Eachsemiconductor oxide portion 70 can include a first semiconductor oxideportion 70A including an oxide of the first semiconductor material ofthe first epitaxial semiconductor layer 20, and a plurality of secondsemiconductor oxide portions 70B contacting the top surface of the firstsemiconductor oxide portion 70A and including an oxide of the secondsemiconductor material of the semiconductor fins 30, which can bedifferent from the first semiconductor material. Each semiconductoroxide portion 70 may, or may not, include a third semiconductor oxideportion 70C located between the first semiconductor oxide portion 70Aand the remaining portion of the single crystalline semiconductorsubstrate 10 and including an oxide of the third single crystallinesemiconductor material, i.e., the semiconductor material of the singlecrystalline semiconductor substrate 10. If the semiconductor oxideportions 70 do not include any oxide of the third single crystallinematerial, the bottommost surface of the semiconductor oxide portions 70can be vertically spaced from the topmost surface of the singlecrystalline semiconductor layer 10 by a portion of the first epitaxialsemiconductor layer 20. If each semiconductor oxide portion 70 includesa third semiconductor oxide portion 70C, the third semiconductor oxideportion 70C is in contact with the remaining portion of the singlecrystalline semiconductor layer 10.

Each second semiconductor oxide portion 70B is formed by oxidizing alower portion of a semiconductor fin 30. The oxidized lower portions ofthe semiconductor fin 30, i.e., the second semiconductor oxide portions70B, are incorporated into the semiconductor oxide portions 70. Eachremaining portion of the semiconductor fin 30 contacts an unoxidizedsemiconductor material portion of the first epitaxial semiconductorlayer 20, which contacts the single crystalline semiconductor substrate10.

In one embodiment, the first single crystalline semiconductor materialof the first epitaxial semiconductor layer 20 can have a greateroxidation rate than the second single crystalline semiconductor materialin the semiconductor fins 30. For example, the first single crystallinesemiconductor material can include a silicon germanium alloy, and thesecond single crystalline semiconductor material can include silicon. Inanother example, the first single crystalline semiconductor material caninclude germanium or a silicon germanium alloy, and the second singlecrystalline semiconductor material can include another silicon germaniumalloy having a greater atomic concentration of silicon than the firstsingle crystalline semiconductor material.

In one embodiment, the single crystalline semiconductor substrate 10 isa single crystalline semiconductor material portion including a thirdsingle crystalline semiconductor material that is different from thefirst single crystalline semiconductor material. The semiconductor oxideportion 70 is located on single crystalline semiconductor substrate 10,which functions as a substrate semiconductor layer. The thirdsemiconductor oxide portion 70C, if present, underlies, and contacts,the first semiconductor oxide portion 70A, and includes an oxide of thethird single crystalline semiconductor material.

Referring to FIG. 8, an alternate embodiment is illustrated, in whichthe temperature, the gas composition, the partial pressure of oxidizingagent(s), and the duration of the anneal are selected such that thesemiconductor oxide portions 70 merge with one another to form a singlesemiconductor oxide portion 70 that contiguously extends across theentirety of the single crystalline semiconductor substrate 10.

In one embodiment, the semiconductor oxide portion 70 can be formed byconversion of the entirety of the first epitaxial semiconductor layer20, bottom portions of the semiconductor fins 30, and an upper portionof the single crystalline semiconductor substrate 10, which is asubstrate semiconductor layer. In this case, the semiconductor oxideportion 70 can include a first semiconductor oxide portion 70A includingan oxide of the first semiconductor material of the first epitaxialsemiconductor layer 20, a plurality of second semiconductor oxideportions 70B contacting the top surface of the first semiconductor oxideportion 70A and including an oxide of the second semiconductor materialof the semiconductor fins 30, which can be different from the firstsemiconductor material, and a third semiconductor oxide portion 70Clocated between the first semiconductor oxide portion 70A and theremaining portion of the single crystalline semiconductor substrate 10and including an oxide of the third single crystalline semiconductormaterial, i.e., the semiconductor material of the single crystallinesemiconductor substrate 10.

Each second semiconductor oxide portion 70B is formed by oxidizing alower portion of a semiconductor fin 30. The oxidized lower portions ofthe semiconductor fin 30, i.e., the second semiconductor oxide portions70B, are incorporated into the semiconductor oxide portion 70. Eachremaining portion of the semiconductor fin 30 is vertically spaced froman unoxidized semiconductor material portion of the single crystallinesemiconductor substrate 10 by the semiconductor oxide portion 70.

In one embodiment, the first single crystalline semiconductor materialof the first epitaxial semiconductor layer 20 can have a greateroxidation rate than the second single crystalline semiconductor materialin the semiconductor fins 30. For example, the first single crystallinesemiconductor material can include a silicon germanium alloy, and thesecond single crystalline semiconductor material can include silicon. Inanother example, the first single crystalline semiconductor material caninclude germanium or a silicon germanium alloy, and the second singlecrystalline semiconductor material can include another silicon germaniumalloy having a greater atomic concentration of silicon than the firstsingle crystalline semiconductor material.

In one embodiment, an interface between the semiconductor oxide portion70 and each semiconductor fin 30 can be a V-shaped groove, i.e., agroove having a vertical cross-sectional shape of a “V”. The bottomportions of the oxygen-impermeable spacers 60 may be deformed during theoxidation process due to the stress applied thereupon as the varioussemiconductor materials become converted into semiconductor oxideportions.

In one embodiment, the single crystalline semiconductor substrate 10 isa single crystalline semiconductor material portion including a thirdsingle crystalline semiconductor material that is different from thefirst single crystalline semiconductor material. The semiconductor oxideportion 70 is located on single crystalline semiconductor substrate 10,which functions as a substrate semiconductor layer. The thirdsemiconductor oxide portion 70C underlies, and contacts, the firstsemiconductor oxide portion 70A, and includes an oxide of the thirdsingle crystalline semiconductor material.

Referring to FIG. 9, the oxygen-impermeable spacers 60 andoxygen-impermeable caps 50 in the first exemplary semiconductorstructure of FIG. 7 or in the first exemplary semiconductor structure ofFIG. 8 can be removed, for example, by an etch that is selective to thesemiconductor material of the semiconductor fins 30. For example, if theoxygen-impermeable spacers 60 and oxygen-impermeable caps 50 includesilicon nitride, a wet etch employing hot phosphoric acid can beemployed to remove the oxygen-impermeable spacers 60 andoxygen-impermeable caps 50, while not etching the semiconductor fins 30and the semiconductor oxide portion 70. While FIG. 9 illustrates anembodiment in which the first exemplary semiconductor structure of FIG.8 is employed, embodiments in which the first exemplary semiconductorstructure of FIG. 7 is employed are also contemplated herein.

Referring to FIGS. 10A and 10B, a gate dielectric 80 and a gateelectrode 90 can be formed over center portions of the semiconductorfins 30. The gate dielectric 80 can include silicon oxide, siliconnitride, and/or silicon oxynitride. Alternately or additionally, thegate dielectric 80 can include at least one dielectric metal oxide suchas HfO₂, ZrO₂, LaO₂, or combinations thereof. Any other gate dielectricmaterial known in the art can also be employed for the gate dielectric80. The gate electrode 90 can include at least one doped semiconductormaterial and/or at least one metallic material as known in the art. Thegate dielectric 80 and the gate electrode 90 can be formed, for example,by depositing a stack of a gate dielectric layer and a conductivematerial layer, and patterning the stack of the gate dielectric layerand the conductive material layer by a combination of lithographicmethods and at least one anisotropic etch.

Subsequently, at least one gate spacer 92 can be formed around thevertical stack of the gate dielectric 80 and the gate electrode 90.Electrical dopants (such as p-type dopants and/or n-type dopants) can beemployed to form source regions 30S and drain regions 30D. Unimplantedregions of the semiconductor fins 30 constitute body regions 30B. Thebody regions 30B, the source regions 30S, the drain regions 30D, thegate dielectric 80, and the gate electrode 90 constitute a field effecttransistor. While FIGS. 10A and 10B illustrate an embodiment in whichthe first exemplary semiconductor structure of FIG. 8 is employed,embodiments in which the first exemplary semiconductor structure of FIG.7 is employed are also contemplated herein.

Referring to FIG. 11, a variation of the first exemplary semiconductorstructure can be derived from the first exemplary semiconductorstructure of FIG. 6 by selecting the processing parameters of theoxidation process and/or the thickness of the first epitaxialsemiconductor layer 20 such that a bottom portion of the first epitaxialsemiconductor layer 20 is not oxidized during the oxidation process. Inthis case, the semiconductor oxide portion 70 can include a firstsemiconductor oxide portion 70A including an oxide of the firstsemiconductor material of the first epitaxial semiconductor layer 20 anda plurality of second semiconductor oxide portions 70B contacting thetop surface of the first semiconductor oxide portion 70A and includingan oxide of the second semiconductor material of the semiconductor fins30, which can be different from the first semiconductor material.

Each second semiconductor oxide portion 70B is formed by oxidizing alower portion of a semiconductor fin 30. The oxidized lower portions ofthe semiconductor fin 30, i.e., the second semiconductor oxide portions70B, are incorporated into the semiconductor oxide portion 70. Eachremaining portion of the semiconductor fin 30 is vertically spaced froman unoxidized semiconductor material portion of the first epitaxialsemiconductor layer 20 by the semiconductor oxide portion 70.

The semiconductor oxide portion 70 is located directly on a singlecrystalline semiconductor material portion, which is the remainingportion of the first epitaxial semiconductor layer 20. The singlecrystalline semiconductor substrate 10 is a substrate semiconductorlayer that includes the third single crystalline semiconductor material,which can be different from the first single crystalline semiconductormaterial. The single crystalline semiconductor substrate 10 is locatedunderneath the single crystalline semiconductor material portion, i.e.,the first epitaxial semiconductor layer 20.

A non-planar interface can be present between the semiconductor oxideportion 70 and the single crystalline semiconductor material portion,i.e., the first epitaxial semiconductor layer 20. The non-planarinterface is vertically spaced from a planar interface between the firstepitaxial semiconductor layer 20 and the single crystallinesemiconductor substrate 10, i.e., the substrate semiconductor layer.

Referring to FIG. 12, a second exemplary semiconductor structureaccording to a second embodiment of the present disclosure includes asubstrate of a first single crystalline semiconductor material. Thesubstrate of the first single crystalline semiconductor material isherein referred to as a first epitaxial semiconductor layer 20, whichcan have the same composition and crystalline structure as in the firstembodiment. A second epitaxial semiconductor layer 30 is formed on thefirst epitaxial semiconductor layer employing the same methods as in thefirst embodiment. The second epitaxial semiconductor layer 30 can be thesame as in the first embodiment. In other words, the second exemplarysemiconductor structure can be derived from the first exemplarysemiconductor structure of FIG. 1 by substituting a substrate thatincludes the first epitaxial semiconductor layer 20 for the stack of thesingle crystalline semiconductor substrate 10 and the first epitaxialsemiconductor layer 20 of the first embodiment.

The same processing steps can be performed as in the first embodiment toform the second exemplary semiconductor structure illustrated in FIG.13. The semiconductor oxide portion 70 can include a first semiconductoroxide portion 70A including an oxide of the first semiconductor materialof the first epitaxial semiconductor layer 20 and a plurality of secondsemiconductor oxide portions 70B contacting the top surface of the firstsemiconductor oxide portion 70A and including an oxide of the secondsemiconductor material of the semiconductor fins 30, which can bedifferent from the first semiconductor material.

The methods and structures of the present disclosure can be employed toform semiconductor fins 30 having a well controlled height without usingsemiconductor-on-insulator substrates by use of end pointing of thesecond anisotropic etch. Additionally, by selecting the compositions forthe first and second single crystalline semiconductor materials suchthat the first single crystalline semiconductor material has a greateroxidation rate than the second single crystalline semiconductormaterial, the oxidation of the bottom portions of the semiconductor fins30 to form the second semiconductor oxide portions 70B can be wellcontrolled and limited. Thus, the height of the semiconductor fins 30Acan be uniform despite wafer-to-wafer and run-to-run non-uniformity.Therefore, the methods of the present disclosure provide an inexpensivemethod of forming semiconductor fins with uniform height.

While the disclosure has been described in terms of specificembodiments, it is evident in view of the foregoing description thatnumerous alternatives, modifications and variations will be apparent tothose skilled in the art. Each of the embodiments described herein canbe implemented individually or in combination with any other embodimentunless expressly stated otherwise or clearly incompatible. Accordingly,the disclosure is intended to encompass all such alternatives,modifications and variations which fall within the scope and spirit ofthe disclosure and the following claims.

What is claimed is:
 1. A method of forming a semiconductor structurecomprising: providing a semiconductor substrate including a firstepitaxial semiconductor layer comprising a first single crystallinesemiconductor material; forming a second epitaxial semiconductor layercomprising a second single crystalline semiconductor material inepitaxial alignment with, and having a different composition from, saidfirst single crystalline semiconductor material on said first epitaxialsemiconductor layer; forming a semiconductor fin by patterning saidsecond epitaxial semiconductor material layer; forming anoxygen-impermeable spacer on sidewalls of said semiconductor fin; andforming a semiconductor oxide portion by oxidizing at least portions ofsaid first epitaxial semiconductor layer, wherein a remaining portion ofsaid semiconductor fin is vertically spaced from an unoxidizedsemiconductor material portion of said semiconductor substrate by saidsemiconductor oxide portion.
 2. The method of claim 1, wherein saidunoxidized semiconductor material portion of said semiconductorsubstrate comprises an unoxidized portion of said first epitaxialsemiconductor layer.
 3. The method of claim 1, further comprisingoxidizing a lower portion of said semiconductor fin, wherein saidoxidized lower portion of said semiconductor fin is incorporated intosaid semiconductor oxide portion.
 4. The method of claim 1, wherein saidfirst single crystalline semiconductor material has a greater oxidationrate than said second single crystalline semiconductor material.
 5. Themethod of claim 4, wherein said first single crystalline semiconductormaterial comprises a silicon germanium alloy, and said second singlecrystalline semiconductor material comprises silicon.
 6. The method ofclaim 4, wherein said first single crystalline semiconductor materialcomprises germanium or a silicon germanium alloy, and said second singlecrystalline semiconductor material comprises another silicon germaniumalloy having a greater atomic concentration of silicon than said firstsingle crystalline semiconductor material.
 7. The method of claim 1,further comprising recessing a top surface of said first epitaxialsemiconductor layer relative to a bottom surface of saidoxygen-impermeable spacer prior to said forming of said semiconductoroxide portion.
 8. The method of claim 7, wherein a depth of saidrecessing does not exceed a thickness of said first epitaxialsemiconductor layer.
 9. The method of claim 7, further comprisingremoving portions of said first epitaxial semiconductor layer underneathsaid oxygen impermeable spacer by an isotropic etch prior to saidforming of said semiconductor oxide portion.
 10. The method of claim 1,wherein said semiconductor substrate is formed by: providing a singlecrystalline semiconductor substrate including a third single crystallinesemiconductor material that is different from said first singlecrystalline semiconductor material; and epitaxially depositing saidfirst epitaxial semiconductor layer on said single crystallinesemiconductor substrate.
 11. The method of claim 10, wherein an entiretyof said first epitaxial semiconductor layer and an upper portion of saidsingle crystalline semiconductor substrate are oxidized to form saidsemiconductor oxide portion.
 12. The method of claim 1, wherein saidfirst epitaxial semiconductor layer extends throughout an entirety ofsaid semiconductor substrate.
 13. The method of claim 1, wherein saidforming of said semiconductor fin comprises: forming a patterned etchmask layer over said second epitaxial semiconductor layer; andtransferring a pattern in said patterned etch mask layer by ananisotropic etch through said second epitaxial semiconductor layeremploying said first epitaxial semiconductor layer as an etch stoplayer, wherein said semiconductor fin including a remaining portion ofsaid second epitaxial semiconductor material layer is formed by saidanisotropic etch.
 14. The method of claim 13, further comprising forminga dielectric layer on said second epitaxial semiconductor layer andforming an oxygen-impermeable layer on said dielectric layer prior tosaid forming of said pattered etch mask layer, wherein said transferringsaid pattern is through said dielectric layer, said oxygen-impermeablelayer, and said second epitaxial semiconductor layer.
 15. The method ofclaim 14, further comprising removing said oxygen-impermeable spacer andremaining portions of said oxygen-impermeable layer.
 16. The method ofclaim 15, further comprising forming a vertical stack of a gatedielectric and a gate electrode over a portion of semiconductor fin. 17.The method of claim 16, wherein said forming said vertical stack of saidgate dielectric and said gate electrode comprises: depositing a stack ofa gate dielectric layer and a conductive material layer; and patteringsaid stack of said gate dielectric layer and said conductive materiallayer by a combination of lithographic methods and at least oneanisotropic etch.
 18. The method of claim 16, further comprising formingat least one gate spacer around said vertical stack of said gatedielectric and said gate electrode.
 19. The method of claim 18, furthercomprising forming a source region and a drain region on opposite sidesof said gate spacer.